1064nm APD avalanche detector for lidar, atmospheric aeroso l detection
Product Description：The 1064nm APD photodetector is specially designed for meteorological Lidar | Aerosol Radar applications, the detector chip is made of Si material at 1064nm response enhancement (0.36A/W), with a 0.8mm photosensitive diameter to facilitate the Lidar return alignment and coupling, the product is mature and stable for the batch supply products.
Tags：1064nm APD Lidar 400-1100nm Free-space lidar
Applications： RF over Fiber (ROF)
Model：WO-APD-1064-50M
1. Overview
Avalanche Photodetectors (APDs) are designed to provide greater sensitivity and lower noise than standard PIN detectors and are well suited for low optical power level applications. We offer versions with variable gain (i.e. M-factor) in addition to the standard APD.
In general, avalanche photodiodes utilize an internal gain mechanism to increase sensitivity. A high reverse bias voltage is applied to the diode to create a strong electric field. When an incident photon creates an electron-hole pair, the electric field accelerates the electron, resulting in the creation of secondary electrons from collisional ionization. The resulting avalanche of electrons will produce a gain factor of several hundred times, denoted by the multiplication factor M, which is a function of reverse bias and temperature. In general, the M factor increases with decreasing temperature and decreases with increasing temperature. Similarly, the M factor will increase as the reverse bias voltage increases and decrease as the reverse bias voltage decreases.
The APD1064 has an integrated thermistor that adjusts the bias voltage to compensate for the effect that temperature changes have on the M-factor.
2. Features
- Temperature Compensation
- 1064nm enhancement
- Optional FC flange
- High sensitivity
- 30mm optical cage system
3.Applications
- Detection of ultra-weak light signals
- Atmospheric Aerosol Lidar
- Cloud Layer Analysis
- Sand and dust storm monitoring
4.Specifications
| Items | APD1064A-10M | APD1064A-50M | APD1064A-200M |
|---|---|---|---|
| Materials | Si | ||
| Wavelength | 400-1100nm | ||
| Photosensitive diameter | 0.8mm | ||
| Responsivity @M=1 | 0.36A/W @ 1064nm | ||
| Bandwidth（a） | DC-10MHz | DC-50MHz | DC-200MHz |
| Rise time（a） | 40ns | 8ns | 2ns |
| Gain (bc) | 9.7x10^6V/W | 1.9x10^6V/W | 8x10^5V/W |
| Saturated Optical power(c) | 0.32uW | 1.7uW | 3.8uW |
| Noise voltage (a) | 18mVpp | 18mVpp | 18mVpp |
| Maximum Output Voltage (b) | 3.2V | 3.2V | 3.2V |
| NEP | 0.12pW/√Hz | 0.23pW/√Hz | 0.3pW/√Hz |
| Operating voltage | 9-12V | ||
| Operating Current | <200mA | ||
| Output Impedance | 50Ω | ||
| Output coupling mode | DC | ||
| Output connector | SMA female | ||
| Operating temperature | -10~65℃ | ||
| Storage temperature | -40~85℃ | ||
Remarks:
a For 50 ohm loads
b For high resistance loads
c 1064nm
5.Response curve
6. Mechanical dimensions
